1HN04CH-TL-W

Техническая спецификация
Manufacturer     ON Semiconductor
Series     -
Packaging     Tape & Reel (TR)
Part Status     Active
FET Type     N-Channel
Technology     MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)     100V
Current - Continuous Drain (Id) @ 25°C     270mA (Ta)
Drive Voltage (Max Rds On, Min Rds On)     4V, 10V
Vgs(th) (Max) @ Id     2.6V @ 100µA
Gate Charge (Qg) (Max) @ Vgs     0.9nC @ 10V
Vgs (Max)     ±20V
Input Capacitance (Ciss) (Max) @ Vds     15pF @ 20V
FET Feature     -
Power Dissipation (Max)     -
Rds On (Max) @ Id, Vgs     8 Ohm @ 140mA, 10V
Operating Temperature     150°C (TJ)
Mounting Type     Surface Mount
Supplier Device Package     3-CPH
Package / Case     TO-236-3, SC-59, SOT-23-3
MOSFET N-CH 100V 0.27A SOT-23 - N-Channel 100V 270mA (Ta) Surface Mount 3-CPH
Транзисторы полевые 1HN04CH-TL-W
Datasheet 1HN04CH-TL-W (PDF)