2N6661JTXP02

Техническая спецификация
Manufacturer     Vishay Siliconix
Series     -
Packaging     Tube
Part Status     Obsolete
FET Type     N-Channel
Technology     MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)     90V
Current - Continuous Drain (Id) @ 25°C     860mA (Tc)
Drive Voltage (Max Rds On, Min Rds On)     5V, 10V
Vgs(th) (Max) @ Id     2V @ 1mA
Vgs (Max)     ±20V
Input Capacitance (Ciss) (Max) @ Vds     50pF @ 25V
FET Feature     -
Power Dissipation (Max)     725mW (Ta), 6.25W (Tc)
Rds On (Max) @ Id, Vgs     4 Ohm @ 1A, 10V
Operating Temperature     -55°C ~ 150°C (TJ)
Mounting Type     Through Hole
Supplier Device Package     TO-39
Package / Case     TO-205AD, TO-39-3 Metal Can
MOSFET N-CH 90V 0.86A TO-205 - N-Channel 90V 860mA (Tc) 725mW (Ta), 6.25W (Tc) Through Hole TO-39
Транзисторы полевые 2N6661JTXP02
Datasheet 2N6661JTXP02 (PDF)