2N7000

Техническая спецификация
Manufacturer     ON Semiconductor
Series     -
Packaging     Bulk
Part Status     Active
FET Type     N-Channel
Technology     MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)     60V
Current - Continuous Drain (Id) @ 25°C     200mA (Ta)
Drive Voltage (Max Rds On, Min Rds On)     4.5V, 10V
Vgs(th) (Max) @ Id     3V @ 1mA
Vgs (Max)     ±20V
Input Capacitance (Ciss) (Max) @ Vds     50pF @ 25V
FET Feature     -
Power Dissipation (Max)     400mW (Ta)
Rds On (Max) @ Id, Vgs     5 Ohm @ 500mA, 10V
Operating Temperature     -55°C ~ 150°C (TJ)
Mounting Type     Through Hole
Supplier Device Package     TO-92-3
Package / Case     TO-226-3, TO-92-3 (TO-226AA)
Base Part Number     2N7000
MOSFET N-CH 60V 200MA TO-92 - N-Channel 60V 200mA (Ta) 400mW (Ta) Through Hole TO-92-3
Транзисторы полевые 2N7000
Datasheet 2N7000 (PDF)